DISCRETE-MODE LASER DIODES
EP1950 Discrete-Mode High Power Series – Coherent Seed Source
The EP1950 Discrete-Mode Series laser diode builds on Eblana Photonics extensive experience in longer wavelength InP processing.
This highly coherent and reliable laser is perfectly designed for integration with Thulium doped fibre amplifiers and lasers for use in a wide range of long wavelength sensing and telecoms applications.
This product is the high power variant of our 2051nm Discrete-Mode range, and utilises a seperately driven Semiconductor Optical Amplifier (SOA) diode chip to boost the output power of the laser diode.
PRODUCT SPECIFICATIONS
KEY POINTS
- Advanced strained InP MQW design
- Excellent spectral purity
- Reliable Tm-doped fibre laser seed
Parameter |
Typical Value |
Units |
| Threshold Current | 25 | mA |
| Slope Efficiency | 0.26 | W/A |
| Output Power | 12 | mW |
| Tuning Coefficient | 0.003 | nm/mA |
| Side Mode Suppression Ratio | 35 | dB |
| Operating Temperature Range | -20 to 65 | °C |
PACKAGE TYPES
14-Pin Butterfly
Fibre-coupled package with TEC, monitor photodiode and optical isolation as standard
DX-1
Simplified, single package for any Eblana laser, with integrated current & TEC control electronics
TO-39 Can
Free-space emitting package with 6-pin connection for easy design integration, and anti-reflection coated window
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